All-silicon photovoltaic detectors with deep ultraviolet selectivity

Yuqiang Li; Wei Zheng; Feng Huang

doi:10.1186/s43074-020-00014-w

All-silicon photovoltaic detectors with deep ultraviolet selectivity

doi: 10.1186/s43074-020-00014-w

基金项目:

This work was supported by the National Natural Science Foundation of China (61427901, 61604178, 91833301 and U1505252).

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出版历程
- 收稿日期: 2020-04-08
- 录用日期: 2020-05-29
- 网络出版日期: 2020-06-08

All-silicon photovoltaic detectors with deep ultraviolet selectivity

State key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P

Funds:

This work was supported by the National Natural Science Foundation of China (61427901, 61604178, 91833301 and U1505252).

摘要

摘要: For a practical photodetector, fast switching speed and high on-off ratio are essential, and more importantly, the integration capability of the device finally determines its application level. In this work, the judiciously engineered Si₃N₄/Si detector with an open-circuit voltage of 0.41 V is fabricated by chemical vapor deposition methods, and exhibits good performance with repeatability. The advanced integration technology of Si₃N₄ and Si is the foundation for imaging functions in the near future. Compare to the current commercial Si p-i-n photodiodes, the detector cuts off the long-wavelength UV light over 260 nm, realizing the spectrum selectivity without filters or complexed accessories. The stability of this detector is further characterized by cycling response, temperature and light intensity dependence tests. In addition, we also analyze and explain the inherent mechanisms that govern the different operations of two types of Si₃N₄/Si photodetectors.
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Abstract: For a practical photodetector, fast switching speed and high on-off ratio are essential, and more importantly, the integration capability of the device finally determines its application level. In this work, the judiciously engineered Si₃N₄/Si detector with an open-circuit voltage of 0.41 V is fabricated by chemical vapor deposition methods, and exhibits good performance with repeatability. The advanced integration technology of Si₃N₄ and Si is the foundation for imaging functions in the near future. Compare to the current commercial Si p-i-n photodiodes, the detector cuts off the long-wavelength UV light over 260 nm, realizing the spectrum selectivity without filters or complexed accessories. The stability of this detector is further characterized by cycling response, temperature and light intensity dependence tests. In addition, we also analyze and explain the inherent mechanisms that govern the different operations of two types of Si₃N₄/Si photodetectors.
- Photodetection /
- Silicon nitride /
- Photovoltaic /
- Deep ultraviolet /
- Silicon based

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参考文献(34)

[1]	Assefa S, Xia F, Vlasov YA. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature. 2010;464:80–4.
[2]	Monroy E, Omnès F, Calle F. Wide-bandgap semiconductor ultraviolet photodetectors. Semicond Sci Technol. 2003;18(4):R33–51.
[3]	Zhang D, Zheng W, Lin R, Li Y, Huang F. Ultrahigh EQE (15%) solar-blind UV photovoltaic detector with organic–inorganic Heterojunction via dual built-in fields enhanced photogenerated carrier separation efficiency mechanism. Adv Funct Mater. 2019;29(26):1900935.
[4]	Chamberlain SG. Photosensitivity and scanning of silicon image detector arrays. IEEE J Solid State Circuits. 1969;4(6):333–42.
[5]	Chamberlain SG, Lee JPY. A novel wide dynamic range silicon photodetector and linear imaging array. IEEE J Solid State Circuits. 1984;19(1):41–8.
[6]	Zheng W, Huang F, Zheng R, Wu H. Low-dimensional structure vacuum-ultraviolet-sensitive (λ < 200 nm) Photodetector with fast-response speed based on high-quality AlN micro/nanowire. Adv Mater. 2015;27(26):3921–7.
[7]	Yin J, Tan Z, Hong H, Wu J, Yuan H, Liu Y, et al. Ultrafast and highly sensitive infrared photodetectors based on two-dimensional oxyselenide crystals. Nat Commun. 2018;9(1):3311.
[8]	Liu H, Meng J, Zhang X, Chen Y, Yin Z, Wang D, et al. High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride. Nanoscale. 2018;10(12):5559–65.
[9]	Zhou AF, Aldalbahi A, Feng P. Vertical metal-semiconductor-metal deep UV photodetectors based on hexagonal boron nitride nanosheets prepared by laser plasma deposition. Opt Mater Express. 2016;6(10):3286–92.
[10]	Zheng W, Lin R, Ran J, Zhang Z, Ji X, Huang F. Vacuum-ultraviolet photovoltaic detector. ACS Nano. 2018;12(1):425–31.
[11]	Qin Y, Li L, Zhao X, Tompa GS, Dong H, Jian G, et al. Metal–semiconductor–metal ε-Ga2O3 solar-blind Photodetectors with a record-high responsivity rejection ratio and their gain mechanism. ACS Photonics. 2020;7(3):812–20.
[12]	Sun H, Li K-H, Castanedo CGT, Okur S, Tompa GS, Salagaj T, et al. HCl flow-induced phase change of α-, β-, and ε-Ga2O3 films grown by MOCVD. Cryst Growth Des. 2018;18(4):2370–6.
[13]	Afanasev VV, Bassler M, Pensl G, Schulz M. Intrinsic SiC/SiO2 Interface States. Physica Status Solidi (a). 1997;162(1):321–37.
[14]	Watanabe K, Taniguchi T, Kanda H. Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal. Nat Mater. 2004;3(6):404–9.
[15]	Yang W, Chen G, Shi Z, Liu C-C, Zhang L, Xie G, et al. Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nat Mater. 2013;12:792.
[16]	Wei T, Islam SM, Jahn U, Yan J, Lee K, Bharadwaj S, et al. GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy. Opt Lett. 2020;45(1):121–4.
[17]	Michel J, Liu J, Kimerling LC. High-performance Ge-on-Si photodetectors. Nat Photonics. 2010;4:527.
[18]	Shao Z, Chen Y, Chen H, Zhang Y, Zhang F, Jian J, et al. Ultra-low temperature silicon nitride photonic integration platform. Opt Express. 2016;24(3):1865–72.
[19]	Weinberg ZA, Pollak RA. Hole conduction and valence-band structure of Si3N4 films on Si. Appl Phys Lett. 1975;27(4):254–5.
[20]	Bauer J. Optical properties, band gap, and surface roughness of Si3N4. Physica status solidi (a). 1977;39(2):411–8.
[21]	Chang H, Chen Z, Li W, Yan J, Hou R, Yang S, et al. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate. Appl Phys Lett. 2019;114(9):091107.
[22]	Li Y, Zhang D, Lin R, Zhang Z, Zheng W, Huang F. Graphene interdigital electrodes for improving sensitivity in a Ga2O3:Zn deep-ultraviolet photoconductive detector. ACS Appl Mater Interfaces. 2019;11(1):1013–20.
[23]	Bertóti I, Varsányi G, Mink G, Székely T, Vaivads J, Millers T, et al. XPS characterization of ultrafine Si3N4 powders. Surf Interface Anal. 1988;12(10):527–30.
[24]	Wada N, Solin SA, Wong J, Prochazka S. Raman and IR absorption spectroscopic studies on α, β, and amorphous Si3N4. J Non-Cryst Solids. 1981;43(1):7–15.
[25]	Kumar M, Roul B, Bhat TN, Rajpalke MK, Kalghatgi AT, Krupanidhi SB. Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions. Physica status solidi (a). 2012;209(5):994–7.
[26]	Oh S, Kim C-K, Kim J. High Responsivity β-Ga2O3 metal–semiconductor–metal solar-blind photodetectors with ultraviolet transparent graphene electrodes. ACS Photonics. 2018;5(3):1123–8.
[27]	Kong W, Wu G, Wang K, Zhan T, Zou Y, Wang D, et al. Graphene-β-Ga2O3 heterojunction for highly sensitive deep UV photodetector application. Adv Mater. 2016;28(48):10725–31.
[28]	Guo DY, Wu ZP, An YH, Guo XC, Chu XL, Sun CL, et al. Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors. Appl Phys Lett. 2014;105(2):023507–11.
[29]	Dong H, Long S, Sun H, Zhao X, He Q, Qin Y, et al. Fast switching beta-Ga2O3 power MOSFET with a trench-gate structure. IEEE Electron Device Lett. 2019;40(9):1385–8.
[30]	Koppens FHL, Mueller T, Avouris P, Ferrari A, Vitiello MS, Polini M. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat Nanotechnol. 2014;9(10):780–93.
[31]	Gritsenko VA, Morokov YN, Novikov YN. Electronic structure of amorphous Si3N4: experiment and numerical simulation. Appl Surf Sci. 1997;113-114:417–21.
[32]	Sun H, Torres Castanedo CG, Liu K, Li K-H, Guo W, Lin R, et al. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction. Appl Phys Lett. 2017;111(16):162105.
[33]	Qin Y, Sun H, Long S, Tompa GS, Salagaj T, Dong H, et al. High-performance metal-organic chemical vapor deposition grown $\varepsilon$ -Ga2O3 solar-blind photodetector with asymmetric Schottky electrodes. IEEE Electron Device Lett. 2019;40(9):1475–8.
[34]	Li C-T, Hsieh F, Wang L. Performance improvement of p-type silicon solar cells with thin silicon films deposited by low pressure chemical vapor deposition method. Sol Energy. 2013;88:104–9.

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All-silicon photovoltaic detectors with deep ultraviolet selectivity

doi: 10.1186/s43074-020-00014-w

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All-silicon photovoltaic detectors with deep ultraviolet selectivity

doi: 10.1186/s43074-020-00014-w

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All-silicon photovoltaic detectors with deep ultraviolet selectivity

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